Abstract: In this letter, we report a novel enhancement mode N-polar Deep Recess (NPDR) Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT). Enhancement mode operation was achieved by ...
Abstract: High-performance GaN based one-chip direct coupled field-effect-transistor logic (DCFL) circuits were demonstrated, in which enhancement-mode (E-mode) GaN high electron mobility transistors ...
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