Abstract: In this letter, we report a novel enhancement mode N-polar Deep Recess (NPDR) Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT). Enhancement mode operation was achieved by ...
TV and home video editor Ty Pendlebury joined CNET Australia in 2006, and moved to New York City to be a part of CNET in 2011. He tests, reviews and writes about the latest TVs and audio equipment.
Abstract: High-performance GaN based one-chip direct coupled field-effect-transistor logic (DCFL) circuits were demonstrated, in which enhancement-mode (E-mode) GaN high electron mobility transistors ...
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