Compound Semiconductor™ is an Angel Business Communications publication.

The company says this first standard-specification SiC-MOSFET will enable the company to respond to the diversification of ...

As part of the Biden-Harris Administration’s Investing in America agenda, the Department of Energy (DOE) has announced a $544 million loan to SK Siltron CCS, LLC to expand Ameri ...

Rohm Semiconductor has announced new surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by ...

X-FAB and SMART Photonics recently signed a Memorandum of Understanding to formalise their collaboration. The aim is to ...

Compound Semiconductor™ is an Angel Business Communications publication.

For its second quarter of fiscal 2025, Wolfspeed targets revenue from continuing operations in a range of $160 million to ...

Compound Semiconductor™ is an Angel Business Communications publication.

Sivers Semiconductors, the Swedish specialist in photonics and wireless technologies, has announced its Q3 2024 results, ...

At the heart of an InGaN LED are InGaN quantum wells, buried within a GaN p-n junction. These devices often feature an AlGaN barrier, used to prevent the overflow of electrons from the quantum well.

Demo developed with IFP Energies Nouvelles delivers high 30 kW/l power density and ease of paralleling Cambridge GaN Devices (CGD) and IFP Energies Nouvelles (IFPEN), a French public research and ...